power transistors 1 publication date: july 2004 sjd00317aed 2SC4359 silicon npn triple diffusion planar type for high breakdown voltage high-speed switching features ? high-speed switching ? high collector-base voltage (emitter open) v cbo ? wide safe oeration area ? satisfactory linearity of forward current transfer ratio h fe absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 2 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 10 ma, i b = 0 800 v collector-base cutoff current (emitter open) i cbo v cb = 900 v, i e = 050 a emitter-base cutoff current (collector open) i ebo v eb = 7 v, i c = 050 a forward current transfer ratio h fe1 v ce = 5 v, i c = 0.1 a 8 ? h fe2 v ce = 5 v, i c = 0.8 a 6 collector-emitter saturation voltage v ce(sat) i c = 0.8 a, i b = 0.16 a 0.6 v base-emitter saturation voltage v be(sat) i c = 0.8 a, i b = 0.16 a 1.2 v transition frequency f t v ce = 5 v, i c = 0.15 a, f = 1 mhz 10 mhz turn-on time t on i c = 0.8 a 0.7 s storage time t stg i b1 = 0.16 a, i b2 = ? 0.32 a 2.5 s fall time t f v cc = 250 v 0.3 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 900 v collector-emitter voltage (e-b short) v ces 900 v collector-emitter voltage (base open) v ceo 800 v emitter-base voltage (collector open) v ebo 7v base current i b 1a collector current i c 3a peak collector current i cp 5a collector power dissipation p c 70 w t a = 25 c 3.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 15.0 0.3 5.0 0.2 11.0 0.2 2.0 0.2 2.0 0.1 0.6 0.2 1.1 0.1 5.45 0.3 10.9 0.5 123 21.0 0.5 16.2 0.5 solder dip (3.5) 15.0 0.2 (0.7) 3.2 0.1 (3.2) 1: base 2: collector 3: emitter eiaj: sc-92 top-3f-a1 package
2SC4359 2 sjd00317aed p c ? t a safe operation area 80 50 40 30 10 20 60 70 0 025 75 50 125 100 150 ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) (3) (2) (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink p c = 3.0 w collector current i c ( a ) collector-emitter voltage v ce ( v ) 0.1 0.01 1 100 10 1 10 100 1 000 i cp i c non repetitive pulse, t c = 25 c t = 1 s t = 10 ms t = 0.01 ms t = 0.02 ms t = 0.1 ms t = 1 ms
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